bat 17w oct-07-1999 1 silicon schottky diodes ? for mixer applications in the vhf / uhf range ? for high-speed switching applications 1 3 vso05561 2 bat 17-05w bat 17-06w bat 17-04w bat 17w eha07004 1 3 2 eha07005 1 3 2 eha07006 1 3 2 13 eha07002 type marking pin configuration package bat 17-04w bat 17-05w bat 17-06w bat 17w 54s 55s 56s 53s 1 = a1 1 = a1 3 = c1 1 = a 2 = c2 2 = a2 2 = c2 2 n.c. 3 = c1/a2 3 = c1/2 3 = a1/2 3 = c sot-323 sot-323 sot-323 sot-323 maximum ratings parameter symbol value unit diode reverse voltage v r 4 v forward current i f 130 ma total power dissipation 1) bat 17w, t a 97 c p tot 150 mw bat 17-04w, -05w, -06w , t s 92 c p tot 150 junction temperature t j 150 c operating temperature range t op -55 ... 150 storage temperature t st g -55 ... 150 thermal resistance junction - ambient 1) bat 17w r thja 435 k/w junction - ambient 1) bas 17-04w ... r thja 550 junction - soldering point bat 17w r thjs 355 junction - soldering point bat 17-04w ... r thjs 390 1) package mounted on alumina 15mm x 17.6mm x 0.7mm)
bat 17w oct-07-1999 2 electrical characteristics at t a = 25 c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics breakdown voltage i (br) = 10 a v (br) 4 - - v reverse current v r = 3 v v r = 4 v i r - - - - 0.25 10 a reverse current v r = 3 v, t a = 60 c i r - - 1.25 forward voltage i f = 0.1 ma i f = 1 ma i f = 10 ma v f 200 250 350 275 340 425 350 450 600 mv ac characteristics diode capacitance v r = 0 v, f = 1 mhz c t 0.4 0.55 0.75 pf differential forward resistance i f = 5 ma, f = 100 khz r f - 8 15 ?
bat 17w oct-07-1999 3 forward current i f = f ( v f ) t a = parameter 0.0 0.2 0.4 0.6 v 1.0 v f -2 10 -1 10 0 10 1 10 2 10 ma i f ta = 25c ta = 85c ta = 125c diode capacitance c t = f ( v r ) f = 1mhz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v r 0.1 0.2 0.3 0.4 pf 0.6 c t leakage current i r = f (v r ) t a = parameter 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v r -3 10 -2 10 -1 10 0 10 1 10 2 10 ua i r 25c 85c 125c
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